The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Aug. 14, 2008
Ken Morito, Kawasaki, JP;
Susumu Yamazaki, Kawasaki, JP;
Shinsuke Tanaka, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A polarization-independent SOA is provided which uses an InP substrate () as a semiconductor substrate and uses GaInNAs having introduced tensile strain as an active layer (). With this configuration, the polarization independence is achieved by introducing the tensile strain, and high saturation optical output power is realized by reducing the film thickness of the active layer () as well as the gain peak wavelength is increased by reducing the band gap of the active layer () through use of GaInNAs made by adding nitrogen (N) to GaInAs as a material of the active layer () so as to achieve high gain especially in C-band and L-band even when band filling exits at the time of injecting a high current into the active layer ().