The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Mar. 16, 2007
Cheol Kyu Kim, Seoul, KR;
Yung Ho Ryu, Seoul, KR;
Soo Min Lee, Seoul, KR;
Jong IN Yang, Gyunggi-do, KR;
Tae Hyung Kim, Seoul, KR;
Cheol Kyu Kim, Seoul, KR;
Yung Ho Ryu, Seoul, KR;
Soo Min Lee, Seoul, KR;
Jong In Yang, Gyunggi-do, KR;
Tae Hyung Kim, Seoul, KR;
Samsung LED Co., Ltd., Gyunggi-do, KR;
Abstract
A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.