The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Dec. 16, 2008
Applicant:
Hirokazu Hayashi, Tokyo, JP;
Inventor:
Hirokazu Hayashi, Tokyo, JP;
Assignee:
Oki Semiconductor Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract
According to a feature of the present invention, a semiconductor device includes a SOI substrate, including a semiconductor substrate; an insulating layer formed on the semiconductor substrate and a silicon layer formed on the insulating layer. A drain region and a source region are formed in the silicon layer so that the source region is in contact with the insulating layer but the drain region is not in contact with the insulating layer.