The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Jun. 16, 2009
Young Bog Kim, Icheon-shi, KR;
Jun Soo Chang, Icheon-Si, KR;
Min Yong Lee, Seoul, KR;
Yong Seok Eun, Seongnam-si, KR;
Young Bog Kim, Icheon-shi, KR;
Jun Soo Chang, Icheon-Si, KR;
Min Yong Lee, Seoul, KR;
Yong Seok Eun, Seongnam-si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A gate structure of a semiconductor device comprising a silicon substrate having a field oxide film, a plurality of gates formed by sequentially stacking a first gate dielectric film, a first gate conductive film, and a gate silicide film on the silicon substrate. a thermal oxide film formed on a side of the first gate conductive film, a plurality of trenches formed between the gates, a second gate oxide film formed on an interior wall of each trench; and a second conductive film formed in a spacer shape on a predetermined region of the second gate oxide film, and on a side of the first gate conductive film, the gate silicide film and the thermal oxide film.