The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Jul. 10, 2008
Jun Zheng, Edina, MN (US);
Jun Zheng, Edina, MN (US);
Seagate Technology LLC, Scotts Valley, CA (US);
Abstract
Non-volatile memory is described. The non-volatile memory includes a substrate having a source region, a drain region and a channel region. The channel region separates the source region and the drain region. An electrically insulating layer is adjacent to the source region, drain region and channel region. A floating gate electrode is adjacent to the electrically insulating layer. The electrically insulating layer separates the floating gate electrode from the channel region. The floating gate electrode has a floating gate major surface. A control gate electrode has a control gate major surface and the control gate major surface opposes the floating gate major surface. A vacuum layer or gas layer at least partially separates the control gate major surface from the floating gate major surface.