The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Jan. 09, 2007
Kyu-sang Lee, Yongin-si, KR;
Kyu-tae Yoo, Yongin-si, KR;
Jeo-young Shim, Yongin-si, KR;
Jin-tae Kim, Yongin-si, KR;
Yeon-ja Cho, Yongin-si, KR;
Kyu-sang Lee, Yongin-si, KR;
Kyu-tae Yoo, Yongin-si, KR;
Jeo-young Shim, Yongin-si, KR;
Jin-tae Kim, Yongin-si, KR;
Yeon-ja Cho, Yongin-si, KR;
Abstract
Provided are a FET-based sensor for detecting an ionic material, an ionic material detecting device including the FET-based sensor, and a method of detecting an ionic material using the FET-based sensor. The FET-based sensor includes: a sensing chamber including a reference electrode and a plurality of sensing FETs; and a reference chamber including a reference electrode and a plurality of reference FETs. The method includes: flowing a first solution into and out of the sensing chamber and the reference chamber of the FET-based sensor; flowing a second solution expected to contain an ionic material into and out of the sensing chamber while continuously flowing the first solution into and out of the reference chamber; measuring a current in a channel region between the source and drain of each of the sensing and reference FETs; and correcting the current of the sensing FETs.