The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Feb. 12, 2007
Mio Suzuki, Niiza, JP;
Akio Iwabuchi, Niiza, JP;
Mio Suzuki, Niiza, JP;
Akio Iwabuchi, Niiza, JP;
Sanken Electric Co., Ltd., , JP;
Abstract
A HEMT-type field-effect semiconductor device has a main semiconductor region formed on a silicon substrate. The main semiconductor region is a lamination of a buffer layer on the substrate, an electron transit layer on the buffer layer, and an electron supply layer on the electron transit layer. A source and a drain overlie the electron supply layer. A carrier storage layer overlies the electron supply layer via an insulator, and a gate overlies the carrier storage layer via another insulator. Upon application of an initialiser voltage to the gate, the carrier storage layer has stored therein a sufficient amount of carriers to hold the device off even without voltage application to the gate. An initialiser circuit is also disclosed whereby the device is initialized automatically for normally-off operation.