The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Jul. 20, 2006
Applicants:
Shinichi Iwakami, Niiza, JP;
Osamu Machida, Niiza, JP;
Inventors:
Shinichi Iwakami, Niiza, JP;
Osamu Machida, Niiza, JP;
Assignee:
Sanken Electric Co., Ltd., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2006.01); H01L 31/109 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device having a GaN-based main semiconductor region formed on a silicon substrate via a buffer region. Source, drain and gate electrodes are formed on the main semiconductor region, and a back electrode on the back of the substrate. The substrate is constituted of two semiconductor regions of opposite conductivity types, with a pn junction therebetween which is conducive to a higher voltage-withstanding capability between the drain and back electrodes.