The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Jan. 15, 2008
Tomoki Inoue, Tokyo, JP;
Tomoki Inoue, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor substrate has a second conductivity type cathode layer formed thereon. The cathode layer has a first conductivity type base layer formed thereon. A first anode region of the second conductivity type is formed in the surface of the base layer. A second anode region of the first conductivity type is formed in the first anode region. A first semiconductor region of the first conductivity type is formed in contact with the semiconductor substrate. A second semiconductor region of the second conductivity type is formed adjacent to the first semiconductor region and in contact with the cathode layer. An intermediate electrode is formed on the surfaces of the first semiconductor region and the contact region.