The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Feb. 06, 2009
Jose Ignacio Del Agua Borniquel, Kessel-Lo, BE;
Tze Poon, Sunnyvale, CA (US);
Robert Schreutelkamp, Leuven, BE;
Majeed Foad, Sunnyvale, CA (US);
Jose Ignacio Del Agua Borniquel, Kessel-Lo, BE;
Tze Poon, Sunnyvale, CA (US);
Robert Schreutelkamp, Leuven, BE;
Majeed Foad, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
In an ion implantation method, a substrate is placed in a process zone and ions are implanted into a region of the substrate to form an ion implanted region. A porous capping layer is deposited on the ion implanted region. The substrate is annealed to volatize at least 80% of the porous capping layer overlying the ion implanted region during the annealing process. An intermediate product comprises a substrate, a plurality of ion implantation regions on the substrate, and a porous capping layer covering the ion implantation regions.