The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 2010

Filed:

Apr. 20, 2007
Applicants:

Manfred Ramin, Austin, TX (US);

Michael F. Pas, Richardson, TX (US);

Husam Alshareef, Austin, TX (US);

Inventors:

Manfred Ramin, Austin, TX (US);

Michael F. Pas, Richardson, TX (US);

Husam Alshareef, Austin, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

Semiconductor devices and fabrication methods are provided, in which fully silicided transistor gates are provided for MOS transistors. A lanthanide series metal is implanted into the gate electrode layer prior to silicidation and diffuses into the gate dielectric during an activation anneal. This process and resultant structure provides adjustment of the gate electrode work function, thereby tuning the threshold voltage of the resulting transistor.


Find Patent Forward Citations

Ramin, Manfred. (2010). Work function adjustment with the implant of lanthanides (U.S. Patent No. 7858459). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7858459

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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