The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Jul. 29, 2008
Amol M. Kalburge, Springfield, VA (US);
Amol M. Kalburge, Springfield, VA (US);
RF Nano Corporation, Newport Beach, CA (US);
Abstract
A method is provided for forming a self-aligned carbon nanotube (CNT) field effect transistor (FET). According to one feature, a self-aligned source-gate-drain (S-G-D) structure is formed that allows for the shrinking of the gate length to arbitrarily small values, thereby enabling ultra-high performance CNT FETs. In accordance with another feature, an improved design of the gate to possess a 'T'-shape, referred to as the 'T-Gate,' thereby enabling a reduction in gate resistance and further providing an increased power gain. The self-aligned T-gate CNT FET is formed using simple fabrication steps to ensure a low cost, high yield process.