The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Jul. 11, 2005
Applicants:
Lee James Jacobson, Cape Elizabeth, ME (US);
Andre′ Paul Labonte′, Lewiston, ME (US);
Inventors:
Lee James Jacobson, Cape Elizabeth, ME (US);
Andre′ Paul Labonte′, Lewiston, ME (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for creating graded or tapered dopant profiles in a semiconductor layer or layers. Preferably, a sub-micron horizontal tip feature is used to control the doping of the layer beneath the feature.
Jacobson, Lee. (2010). Method for forming a lens using sub-micron horizontal tip feature (U.S. Patent No. 7858428). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7858428
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile