The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7858425 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 28, 2010

Filed:

May. 21, 2008
Applicants:

Thomas J. Sanders, Indialantic, FL (US);

Nicolaas W. Van Vonno, Melbourne, FL (US);

Clyde Combs, Satellite Beach, FL (US);

Glenn T. Hess, Satellite Beach, FL (US);

Inventors:

Thomas J. Sanders, Indialantic, FL (US);

Nicolaas W. Van Vonno, Melbourne, FL (US);

Clyde Combs, Satellite Beach, FL (US);

Glenn T. Hess, Satellite Beach, FL (US);

Assignee:

Other;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/782 (2006.01);
U.S. Cl.
CPC ...
Abstract

A PIN diode-based monolithic Nuclear Event Detector and method of manufacturing same for use in detecting a desired level of gamma radiation, in which a PIN diode is integrated with signal processing circuitry, for example CMOS circuitry, in a single thin-film Silicon On Insulator (SOI) chip. The PIN diode is implemented in the p-substrate layer. The signal processing circuitry is located in a thin semiconductor layer and is in electrical communication with the PIN diode. The PIN diode may be integrated with the signal processing circuitry onto a single chip, or may be fabricated stand alone using SOI methods according to the method of the invention.


Find Patent Forward Citations

Sanders, Thomas. (2010). Monolithic nuclear event detector and method of manufacture (U.S. Patent No. 7858425). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7858425

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