The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Oct. 17, 2007
Yoshiaki Watanabe, Kanagawa, JP;
Tomonori Hino, Kanagawa, JP;
Nobukata Okano, Kanagawa, JP;
Hisayoshi Kuramochi, Kanagawa, JP;
Yuichiro Kikuchi, Kanagawa, JP;
Tatsuo Ohashi, Kanagawa, JP;
Yoshiaki Watanabe, Kanagawa, JP;
Tomonori Hino, Kanagawa, JP;
Nobukata Okano, Kanagawa, JP;
Hisayoshi Kuramochi, Kanagawa, JP;
Yuichiro Kikuchi, Kanagawa, JP;
Tatsuo Ohashi, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
Herein disclosed a method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.