The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Mar. 17, 2006
Applicants:
Mayuko Fudeta, Mihara, JP;
Satoshi Komada, Mihara, JP;
Inventors:
Mayuko Fudeta, Mihara, JP;
Satoshi Komada, Mihara, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a nitride semiconductor device includes the steps of forming a groove on a surface of a first substrate by scribing, and forming a nitride semiconductor layer on the surface where the groove is formed. In addition, the method includes the steps of bonding the nitride semiconductor layer and a second substrate together and separating the nitride semiconductor layer and the first substrate from each other. With this manufacturing method, a nitride semiconductor device can be obtained with high yield.