The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 2010

Filed:

Feb. 05, 2010
Applicant:

Chun-hao Tung, Hsinchu, TW;

Inventor:

Chun-Hao Tung, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing the pixel structure is provided. The method includes forming a gate, a scan line connected to the gate, and at least one auxiliary pattern on a substrate. An insulating layer, a semiconductor layer, an ohmic contact layer, and a photoresist layer are formed in sequence. Afterwards, a single exposure and development is performed on the photoresist layer to form a first portion and a second portion. Next, the ohmic contact layer and the semiconductor layer which are not covered by the photoresist layer are removed to expose a part of the insulating layer. Next, the second portion of the photoresist layer is removed. Subsequently, a part of the thickness of the semiconductor layer not covered by the first portion is removed and the exposed insulating layer is removed, so as to form a channel layer and an insulating layer.


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