The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Nov. 03, 2008
Yoshiaki Watanabe, Kanagawa, JP;
Hironobu Narui, Kanagawa, JP;
Yuichi Kuromizu, Kanagawa, JP;
Yoshinori Yamauchi, Tokyo, JP;
Yoshiyuki Tanaka, Miyagi, JP;
Yoshiaki Watanabe, Kanagawa, JP;
Hironobu Narui, Kanagawa, JP;
Yuichi Kuromizu, Kanagawa, JP;
Yoshinori Yamauchi, Tokyo, JP;
Yoshiyuki Tanaka, Miyagi, JP;
Sony Corporation, Tokyo, JP;
Abstract
A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type AlGaAs layer as a top layer of a p-type DBR layer and forming refractive index distribution like that of a concave lens.