The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Jul. 08, 2009
Chin Chen Yang, Hsinchu, TW;
Chin Chen Yang, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A method of forming a mask for optically transferring a lithographic pattern having a plurality of isolated elements onto a semiconductor substrate, wherein spacing between these isolated elements is controlled according to a given pitch, the method comprising: disposing a plurality of assist features around each of the plurality of isolated elements, each assist feature near to a corner of one isolated element, each assist feature having a width, a length, a first separation parameter defining a distance between individual assist features, and a second separation parameter defining a distance between each of the plurality of assist features and each corresponding adjacent isolated element in the plurality of isolated elements; determining optimized values of the width, the length, the first separation parameter, and the second separation parameter; and setting an assist feature rule according to the given pitch and the optimized values.