The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Aug. 14, 2008
Tetsuya Hiraki, Tokyo, JP;
Naoki Ohta, Tokyo, JP;
Yoshiaki Tanaka, Tokyo, JP;
TDK Corporation, Tokyo, JP;
Abstract
A method of measuring dimension of a first pattern with a narrow first width, and a second pattern with a second width wider than the first width of the first pattern and formed in a symmetrical appearance with respect to a center of the second pattern, the second pattern having edges opposed to each other defining the second width, includes a step of forming a pair of first dummy patterns each having a narrow width, the pair of first dummy patterns being spaced from the edges of the second pattern respectively by a distance approximate to the first width of the first pattern, a first measurement step of measuring, using a dimension measuring device, a spaced distance of one of the first dummy patterns from the edge of the second pattern and a width of the one of the first dummy patterns within the same field of view of the dimension measuring device, a second measurement step of measuring, using the dimension measuring device, a width of the first pattern under the same measurement condition as that of the first measurement step, and a calculation step of calculating a width of the second pattern from W=2D+W+D, where Wis the calculated width of the second pattern, Dis a design value of a distance between the centers of the pair of first dummy patterns, Dis a measured spaced distance of the one of the first dummy patterns from the edge of the second pattern, and Wis a measured width of the one of the first dummy patterns.