The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Mar. 12, 2007
Takashi Ohno, Yokohama, JP;
Masae Kubo, Yokohama, JP;
Michikazu Horie, Yokohama, JP;
Masaaki Mizuno, Yokohama, JP;
Hiroyuki Hoshino, Yokohama, JP;
Akio Okamuro, Tokyo, JP;
Takashi Ohno, Yokohama, JP;
Masae Kubo, Yokohama, JP;
Michikazu Horie, Yokohama, JP;
Masaaki Mizuno, Yokohama, JP;
Hiroyuki Hoshino, Yokohama, JP;
Akio Okamuro, Tokyo, JP;
Mitsubishi Kagaku Media Co., Ltd., Tokyo, JP;
Abstract
A rewritable optical recording medium including: a substrate having a guide groove formed thereon, a phase-change type recording layer, a portion in a crystalline state of the phase-change type recording layer corresponds to an unrecorded or erased state, and a portion in an amorphous state of the phase-change type recording layer corresponds to a recorded state, so that an amorphous mark corresponding to the recorded state is formed upon irradiation with a recording laser beam. The phase-change type recording layer contains Sb as a main component, and further contains Ge and/or Te, a content of Ge is from 1 atomic % to 30 atomic %, and a content of Te is from 10 atomic % to 30 atomic %, and in the phase-change type recording layer, Sb/Te is at least 4.5, and the atomic ratio of Ge to Te is from 1:3 to 1:20.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile