The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Jan. 25, 2007
An-thung Cho, Hsin-Chu, TW;
Chih-wei Chao, Hsin-Chu, TW;
Chia-tien Peng, Hsin-Chu, TW;
Wan-yi Liu, Hsin-Chu, TW;
Ming-wei Sun, Hsin-Chu, TW;
An-Thung Cho, Hsin-Chu, TW;
Chih-Wei Chao, Hsin-Chu, TW;
Chia-Tien Peng, Hsin-Chu, TW;
Wan-Yi Liu, Hsin-Chu, TW;
Ming-Wei Sun, Hsin-Chu, TW;
AU Optronics Corporation, Hsinchu, TW;
Abstract
The present invention relates to a method for forming a layered structure with silicon nanocrystals. In one embodiment, the method comprises the steps of: (i) forming a first conductive layer on a substrate, (ii) forming a silicon-rich dielectric layer on the first conductive layer, and (iii) laser-annealing at least the silicon-rich dielectric layer to induce silicon-rich aggregation to form a plurality of silicon nanocrystals in the silicon-rich dielectric layer. The silicon-rich dielectric layer is one of a silicon-rich oxide film having a refractive index in the range of about 1.4 to 2.3, or a silicon-rich nitride film having a refractive index in the range of about 1.7 to 2.3. The layered structure with silicon nanocrystals in a silicon-rich dielectric layer is usable in a solar cell, a photodetector, a touch panel, a non-volatile memory device as storage node, and a liquid crystal display.