The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Nov. 24, 2008
Shekhar Bhansali, Tampa, FL (US);
Lawrence C. Langebrake, Seminole, FL (US);
Shreyas Bhat, Tampa, FL (US);
Shekhar Bhansali, Tampa, FL (US);
Lawrence C. Langebrake, Seminole, FL (US);
Shreyas Bhat, Tampa, FL (US);
University of South Florida, Tampa, FL (US);
Abstract
A MEMS-based silicon pressure sensor for the ocean environment is presented. The invention is a multiple diaphragm piezoresistive pressure sensor for measuring the pressure of a liquid, comprising an inner deformable diaphragm formed on a silicon substrate, the inner deformable diaphragm having a first thickness an outer deformable diaphragm formed on the silicon substrate, the outer deformable diaphragm having a second thickness which is greater than the first thickness, positioned below the inner deformable diaphragm to support the inner deformable diaphragm, a first piezoresistive bridge embedded in the inner deformable diaphragm, a second piezoresistive bridge embedded in the outer deformable diaphragm and possibly a third piezoresistive bridge embedded in the silicon substrate to compensate for temperature variations.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile