The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2010
Filed:
Aug. 22, 2008
Lithium niobate modulator having a doped semiconductor structure for the mitigation of dc bias drift
Keyvan Sayyah, Santa Monica, CA (US);
Robert R. Hayes, Calabasas, CA (US);
Keyvan Sayyah, Santa Monica, CA (US);
Robert R. Hayes, Calabasas, CA (US);
The Boeing Company, Chicago, IL (US);
Abstract
There is provided in one of the embodiments of the disclosure a lithium niobate modulator structure for mitigating DC bias drift comprising a highly doped semiconductor layer patterned above an optical waveguide having one or more DC sections and an RF section, wherein a metal layer or contact is in contact with a portion of the semiconductor layer and a buffer layer is deposited in the RF section. There is provided in another embodiment of the disclosure a method for making a lithium niobate electro-optical modulator for mitigation of DC bias drift.