The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 21, 2010

Filed:

Aug. 27, 2008
Applicant:

Mika Ebihara, Chiba, JP;

Inventor:

Mika Ebihara, Chiba, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device has a semiconductor substrate having a first conductivity type and a resistor having a substantially U-shaped contour and being formed from an epitaxial layer disposed on the semiconductor substrate and having a second conductivity type different from the first conductivity type. A first trench is formed around an exterior of the resistor to a depth sufficient enough to reach the semiconductor substrate. A second trench is formed in an interior of the resistor to provide the resistor with the U-shaped contour. First and second insulating films are disposed in the first and second trenches, respectively. A heavily-doped region of the second conductivity type having an impurity concentration sufficient to obtain a contact with a metal wire is arranged at both ends of the resistor.


Find Patent Forward Citations

Loading…