The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2010
Filed:
Oct. 16, 2006
Applicants:
Akira Ito, Irvine, CA (US);
Henry Kuo-shun Chen, Irvine, CA (US);
Inventors:
Akira Ito, Irvine, CA (US);
Henry Kuo-Shun Chen, Irvine, CA (US);
Assignee:
Broadcom Corporation, Irvine, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
Optimization of the implantation structure of a metal oxide silicon field effect transistor (MOSFET) device fabricated using conventional complementary metal oxide silicon (CMOS) logic foundry technology to increase the breakdown voltage. The techniques used to optimize the implantation structure involve lightly implanting the gate region, displacing the drain region from the gate region, and implanting P-well and N-well regions adjacent to one another without an isolation region in between.