The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2010
Filed:
Apr. 29, 2008
Kun Sik Park, Daejeon, KR;
Yong Sun Yoon, Daejeon, KR;
BO Woo Kim, Daejeon, KR;
Jin Yeong Kang, Daejeon, KR;
Jong Moon Park, Daejeon, KR;
Seong Wook Yoo, Daegu, KR;
Kun Sik Park, Daejeon, KR;
Yong Sun Yoon, Daejeon, KR;
Bo Woo Kim, Daejeon, KR;
Jin Yeong Kang, Daejeon, KR;
Jong Moon Park, Daejeon, KR;
Seong Wook Yoo, Daegu, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
A BJT (bipolar junction transistor)-based uncooled IR sensor and a manufacturing method thereof are provided. The BJT-based uncooled IR sensor includes: a substrate; at least one BJT which is formed to be floated apart from the substrate; and a heat absorption layer which is formed on an upper surface of the at least one BJT, wherein the BJT changes an output value according heat absorbed through the heat absorption layer. Accordingly, it is possible to provide a BJT-based uncooled IR sensor capable of being implemented through a CMOS compatible process and obtaining more excellent temperature change detection characteristics.