The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7855151 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 21, 2010

Filed:

Aug. 21, 2007
Applicants:

Swaroop K. Kommera, Corvallis, OR (US);

Siddhartha Bhowmik, Salem, OR (US);

Richard J. Oram, Corvallis, OR (US);

Sriram Ramamoorthi, Corvallis, OR (US);

David M. Braun, Corvallis, OR (US);

Inventors:

Swaroop K. Kommera, Corvallis, OR (US);

Siddhartha Bhowmik, Salem, OR (US);

Richard J. Oram, Corvallis, OR (US);

Sriram Ramamoorthi, Corvallis, OR (US);

David M. Braun, Corvallis, OR (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

A slot is formed that reaches through a first side of a silicon substrate to a second side of the silicon substrate. A trench is laser patterned. The trench has a mouth at the first side of the silicon substrate. The trench does not reach the second side of the silicon substrate. The trench is dry etched until a depth of at least a portion of the trench is extended approximately to the second side of the silicon substrate (). A wet etch is performed to complete formation of the slot. The wet etch etches silicon from all surfaces of the trench.


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