The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2010
Filed:
Jan. 09, 2009
Young Mook OH, Gyeonggi-do, KR;
Youngjin Choi, Hopewell Junction, NY (US);
Young Mook Oh, Gyeonggi-do, KR;
Youngjin Choi, Hopewell Junction, NY (US);
Samsung Electronics Co., Ltd., , KR;
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods of forming dual-damascene metal interconnect structures include forming an electrically insulating layer on an integrated circuit substrate and then forming a hard mask layer on the electrically insulating layer. The hard mask layer may include a stacked composite of at least four electrically insulating material layers therein. The hard mask layer may also have separate trench and via patterns therein that are respectively defined by at least first and second ones of the electrically insulating material layers and at least third and fourth ones of the electrically insulating material layers.