The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2010
Filed:
Mar. 28, 2008
Akihiko Endo, Yamagata, JP;
Nobuyuki Morimoto, Yamagata, JP;
Akihiko Endo, Yamagata, JP;
Nobuyuki Morimoto, Yamagata, JP;
Sumco Corporation, Tokyo, JP;
Abstract
The present invention provides a method of manufacturing a bonded wafer. The method includes forming an oxygen ion implantation layer in an active layer wafer having a substrate resistivity of 1 to 100 mΩcm by implanting oxygen ions in the active layer wafer, bonding a base wafer and the active layer wafer directly or through an insulating layer to form a bonded wafer, heat treating the bonded wafer to strengthen the bond and convert the oxygen ion implantation layer into a stop layer, grinding, polishing, and/or etching, from the active layer wafer surface side, the bonded wafer in which the bond has been strengthened to expose the stop layer on a surface of the bonded wafer, removing the stop layer, and subjecting the bonded wafer from which the stop layer has been removed to a heat treatment under a reducing atmosphere to diffuse an electrically conductive component comprised in the active layer wafer.