The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2010
Filed:
May. 13, 2010
Ming-yan Chen, Hsinchu, TW;
Yi-wei Chen, Hsinchu, TW;
Yi-sheng Cheng, Hsinchu, TW;
Ying-chi Liao, Hsinchu, TW;
Ming-Yan Chen, Hsinchu, TW;
Yi-Wei Chen, Hsinchu, TW;
Yi-Sheng Cheng, Hsinchu, TW;
Ying-Chi Liao, Hsinchu, TW;
Au Optronics Corporation, Hsinchu, TW;
Abstract
A fabrication method of a pixel structure includes providing a substrate. A semiconductor layer and a first conductive layer are formed on the substrate in sequence and patterned to form a semiconductor pattern and a data line pattern. A gate insulation layer and a second conductive layer are formed on the substrate in sequence and patterned to form a gate pattern and a scan line pattern connected to each other. A source region, a drain region, a channel region, and a lightly doped region are formed in the semiconductor pattern. A third conductive layer formed on the substrate is patterned to form a source pattern and a drain pattern. A protective layer is formed on the substrate and patterned to form a contact window to expose the drain pattern. A pixel electrode electrically connected to the drain pattern through the contact window is formed on the protective layer.