The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2010
Filed:
Feb. 20, 2008
Applicants:
Chikara Watatani, Tokyo, JP;
Toru Takiguchi, Tokyo, JP;
Inventors:
Chikara Watatani, Tokyo, JP;
Toru Takiguchi, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor film is formed on a GaAs substrate (semiconductor substrate). An SiOfilm (insulating film) is formed on the semiconductor film, and the SiOfilm is patterned. The semiconductor film is etched using the SiOfilm as a mask to form a mesa structure. The surface of the SiOfilm is treated by ashing, using SFgas (fluorine-containing gas), to terminate the surface of the SiOfilm with fluorine. The mesa structure is selectively buried with a III-V compound semiconductor film, using the SiOfilm having the surface that has been terminated by fluorine, as a mask.