The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2010
Filed:
Apr. 23, 2009
Eun Soo Nam, Daejeon, KR;
Seon Eui Hong, Daejeon, KR;
Myoung Sook OH, Daejeon, KR;
Yong Won Kim, Daejeon, KR;
Ho Young Kim, Daejeon, KR;
BO Woo Kim, Daejeon, KR;
Eun Soo Nam, Daejeon, KR;
Seon Eui Hong, Daejeon, KR;
Myoung Sook Oh, Daejeon, KR;
Yong Won Kim, Daejeon, KR;
Ho Young Kim, Daejeon, KR;
Bo Woo Kim, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.