The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Oct. 03, 2007
Susumu Kobayashi, Kanagawa, JP;
Morihisa Hirata, Kanagawa, JP;
Mototsugu Okushima, Kanagawa, JP;
Tomohiro Kitayama, Kanagawa, JP;
Tetsuya Katou, Kanagawa, JP;
Susumu Kobayashi, Kanagawa, JP;
Morihisa Hirata, Kanagawa, JP;
Mototsugu Okushima, Kanagawa, JP;
Tomohiro Kitayama, Kanagawa, JP;
Tetsuya Katou, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
An ESD (Electrostatic Discharge) analysis device includes: a circuit simulation unit; a border cell extraction unit; and a check unit. The circuit simulation unit executes a circuit simulation of design data of a semiconductor integrated circuit including a plurality of circuits of a plurality of power supply systems, to calculate potentials in a plurality of current paths between pads of different two of the plurality of power supply systems, when one of an ESD current and an ESD voltage is applied between the pads. The border cell extraction unit extracts border cells from circuits of the different two of the plurality of power supply systems, wherein the circuits are included in the plurality of circuits, the border cells input and/or output signals between the circuits. The check unit checks an ESD tolerance by calculating a potential difference between the border cells, based on the calculated potentials, the extracted border cells.