The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Sep. 22, 2008
Takeshi Yokoyama, Hyogo, JP;
Takayuki Kashima, Hyogo, JP;
Kouji Makita, Hyogo, JP;
Panasonic Corporation, Osaka, JP;
Abstract
On a first region that is a part of one main face of a semiconductor substrate, a first semiconductor laser structureis formed so as to have a first lower cladding layer, a first active layerwith a first quantum well structure and first upper cladding layers, which are layered in this order from the semiconductor substrate side, thereby forming a first resonator. On a second region that is different from the first region, a second semiconductor laser structureis formed so as to have a second lower cladding layer, a second active layerwith a second quantum well structure and a second upper cladding layer, which are layered in this order, thereby forming a second resonator. End face coating filmsare formed on facets of the first and the second resonators, and a nitrogen-containing layeris formed between the facets of the first and the second resonators and the facet coating film. In the semiconductor laser device provided with a high-output dual-wavelength lasers that are formed monolithically, the decrease of the COD level during the high-output operation of the laser can be suppressed.