The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 2010

Filed:

Jan. 07, 2008
Applicants:

Todd a Christensen, Rochester, MN (US);

Elizabeth L Gerhard, Rochester, MN (US);

Omer Heymann, Moshav Tzofit, IL;

Amira Rozenfeld, Hertzeliyya, IL;

Inventors:

Todd A Christensen, Rochester, MN (US);

Elizabeth L Gerhard, Rochester, MN (US);

Omer Heymann, Moshav Tzofit, IL;

Amira Rozenfeld, Hertzeliyya, IL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A novel and useful mechanism for reducing current leakage in a static random access memory array which significantly reduces the power requirements of the memory array. The method enables the steady state of all local and global bit lines in an SRAM array to be discharged during both active and inactive modes. The memory array includes memory cells having an N channel field effect transistor read stack. A mechanism is provided to evaluate data from memory cells where the steady state of local and global read bit lines is discharged.


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