The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Feb. 15, 2008
Applicants:
Chang-hee Shin, Chungcheongbuk-do, KR;
Ki-seok Cho, Chungcheongbuk-do, KR;
Inventors:
Chang-Hee Shin, Chungcheongbuk-do, KR;
Ki-Seok Cho, Chungcheongbuk-do, KR;
Assignee:
MagnaChip Semiconductor Ltd., Chungcheongbuk-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
One-time programmable cell and memory device having the same includes a first metal oxide semiconductor (MOS) transistor configured to form a current path between a first node and a second node in response to a read-control signal, a second MOS transistor configured to form a current path between a third node and the second node in response to a write-control signal and an anti-fuse connected between the second node and a ground voltage terminal, wherein a voltage applied to the second node is output as an output signal.