The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Jul. 19, 2006
Michinobu Tanioka, Tokyo, JP;
Shigeki Hoshino, Tokyo, JP;
Toru Taura, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The semiconductor device testing apparatus has a testing LSI; a power supply unit; and an intermediate substrate. The testing LSI has a dielectric material layer facing a tested semiconductor device; an electrode disposed in a position corresponding to a position of an external terminal electrode of the tested device on a surface of the dielectric layer facing the tested device; and a first penetrating electrode that passes completely through the dielectric layer, is connected to the electrode, and is used for exchanging signals with the exterior. The power supply unit has mutually independent elastic probe pins that are disposed in positions corresponding to power electrodes of the tested device, and that are provided with a metal protrusion at the distal ends thereof; a substrate on which a first wiring layer is formed and is electrically connected to the probe pins; and a second penetrating electrode that passes through the substrate.