The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Nov. 29, 2005
Byung-ki Cheong, Seoul, KR;
Jeung-hyun Jeong, Seoul, KR;
Dae-hwan Kang, Seoul, KR;
Taek Sung Lee, Seoul, KR;
IN Ho Kim, Seoul, KR;
Kyeong Seok Lee, Seoul, KR;
Won Mok Kim, Seoul, KR;
Dong-ho Ahn, Seoul, KR;
Ki-bum Kim, Seoul, KR;
Byung-ki Cheong, Seoul, KR;
Jeung-hyun Jeong, Seoul, KR;
Dae-Hwan Kang, Seoul, KR;
Taek Sung Lee, Seoul, KR;
In Ho Kim, Seoul, KR;
Kyeong Seok Lee, Seoul, KR;
Won Mok Kim, Seoul, KR;
Dong-Ho Ahn, Seoul, KR;
Ki-Bum Kim, Seoul, KR;
Korea Institute of Science and Technology, Seoul, KR;
Seoul National University Industry Foundation, Seoul, KR;
Abstract
The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.