The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Feb. 07, 2008
Sang Su Lee, Daejeon, KR;
Kibong Song, Daejeon, KR;
Jeong Dae Suh, Daejeon, KR;
Keongam Kim, Seoul, KR;
Doo-hee Cho, Daejeon, KR;
Sang Su Lee, Daejeon, KR;
Kibong Song, Daejeon, KR;
Jeong Dae Suh, Daejeon, KR;
Keongam Kim, Seoul, KR;
Doo-Hee Cho, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided is a thin film transistor (TFT) which uses CIS (CuInSe), including Se, which is a chalcogen-based material, and can provide a rectifying function, and electric and optical switching functions of a diode. The TFT according to the present invention includes, a substrate, a gate electrode formed on a portion of the substrate, an insulating layer covering the substrate and a gate electrode, a plurality of CIS (CuInSe) films formed on the insulating layer so as to cover the region where the gate electrode is formed; and source/drain regions separated from each other so as to comprise a trench exposing a portion of a surface of the CIS films.