The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Dec. 27, 2006
Applicant:
Satoru Ohta, Saitama, JP;
Inventor:
Satoru Ohta, Saitama, JP;
Assignee:
Pioneer Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/24 (2006.01); H01L 51/00 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
To provide an organic transistor which can achieve a reduced leak current from a gate electrode. An organic transistor including a substrate, a pair of a source electrodeand a drain electrode, an organic semiconductor layerprovided between the source electrodeand the drain electrode, and a gate electrodeprovided in association with the organic semiconductorwith a gate insulating layerinterposed therebetween, wherein the gate insulating layerhas a stacked structure including at least an organic insulating layerand an inorganic barrier layer