The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Feb. 13, 2007
Alexander Kastalsky, Wayside, NJ (US);
Alexander Kastalsky, Wayside, NJ (US);
Nano-Electronic And Photonic Devices And Circuits, LLC, Bridgeport, PA (US);
Abstract
The Nanotube Array Ballistic Transistors are disclosed, wherein the ballistic (without collisions) electron propagation along the nanotubes, grown normally to the substrate plane on the common metal electrode, is used for a new class of hybrid (solid state/vacuum) electronic devices. In the disclosed transistors, the array of nanotubes emits electrons into vacuum when electrons gain sufficient energy inside the nanotubes due to ballistic electron movement under the voltage applied to the nanotube ends. In the disclosed devices, planar layer deposition technology is used to form multilayer structures and attach two electrodes to the nanotubes ends. The ballistic transistor can also be used for making a new type of electron-emission display when a phosphor layer is deposited on the anode electrode. The non-ballistic nanotube array transistor, employing field-induced electron emission and the same planar layer deposition technique, is also disclosed, the device being considered to be a transistor approaching terahertz frequency range of operation.