The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
May. 24, 2007
Dae-hwan Kang, Seoul, KR;
In-ho Kim, Seoul, KR;
Byung Ki Cheong, Seoul, KR;
Jeung-hyun Jeong, Seoul, KR;
Taek Sung Lee, Seoul, KR;
Won Mok Kim, Seoul, KR;
Ki-bum Kim, Seoul, KR;
Dae-Hwan Kang, Seoul, KR;
In-Ho Kim, Seoul, KR;
Byung Ki Cheong, Seoul, KR;
Jeung-Hyun Jeong, Seoul, KR;
Taek Sung Lee, Seoul, KR;
Won Mok Kim, Seoul, KR;
Ki-Bum Kim, Seoul, KR;
Abstract
The present invention relates to a non-volatile electrical phase change memory device comprising a substrate, a first interlayer dielectric film deposited on the substrate, a bottom electrode layer formed on the first dielectric layer, a second interlayer dielectric film formed on the bottom electrode layer, a phase change material layer deposited on the second interlayer dielectric film, and a top electrode layer formed on said phase change material layer, the bottom electrode layer being brought into contact with the phase change material layer through a contact hole which is formed in the second interlayer dielectric film and filled with the phase change material or bottom electrode material, so that the phase change layer and the bottom electrode layer come into close contact with each other, wherein an interfacial control layer is formed at the interface of the contact hole between the phase change layer and the bottom electrode layer, said interfacial control layer having strong chemical bonds with the phase change material as well as electrical resistivity and thermal conductivity values lower than those of the bottom electrode material.