The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Feb. 15, 2007
Paul N. Arendt, Los Alamos, NM (US);
Liliana Stan, Los Alamos, NM (US);
Quanxi Jia, Los Alamos, NM (US);
Raymond F. Depaula, Santa Fe, NM (US);
Igor O. Usov, Los Alamos, NM (US);
Paul N. Arendt, Los Alamos, NM (US);
Liliana Stan, Los Alamos, NM (US);
Quanxi Jia, Los Alamos, NM (US);
Raymond F. DePaula, Santa Fe, NM (US);
Igor O. Usov, Los Alamos, NM (US);
Los Alamos National Security, LLC, Los Alamos, NM (US);
Abstract
The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ('IBAD') techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ('MgO') technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.