The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Jun. 18, 2007
Franz Dietz, Untereisesheim, DE;
Volker Dudek, Ettlingen, DE;
Michael Graf, Leutenbach, DE;
Thomas Hoffmann, Filderstadt, DE;
Franz Dietz, Untereisesheim, DE;
Volker Dudek, Ettlingen, DE;
Michael Graf, Leutenbach, DE;
Thomas Hoffmann, Filderstadt, DE;
TELEFUNKEN Semiconductors GmbH & Co. KG, Heilbronn, DE;
Abstract
A method for producing deep trench structures in an STI structure of a semiconductor substrate is provided, with the following successive process steps: subsequent to a full-area filling of STI recesses introduced into a semiconductor substrate with a first filler material, a first surface of a semiconductor structure is subjected to a CMP process to level the applied filler material and produce the STI structure; the leveled STI structure thus produced is structured; using the structured, leveled STI structure as a hard mask, at least one deep trench is etched in the area of this STI structure to create the deep trench structures.