The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Jun. 11, 2009
Applicants:
Li-cheng Lin, Taipei, TW;
Wei-chieh Lin, Hsinchu, TW;
Inventors:
Li-Cheng Lin, Taipei, TW;
Wei-Chieh Lin, Hsinchu, TW;
Assignee:
Anpec Electronics Corporation, Hsinchu Science Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming semiconductor device, which simultaneously forms a trench MOS transistor device, and an embedded schottky barrier diode (SBD) device in a semiconductor substrate. The embedded SBD device has lower forward voltage drop, which reduces power dissipation. In addition, the voltage bearing ability may be modified easily by virtue of altering the dopant concentration or the width of the voltage bearing dopant region, or the thickness of epitaxial silicon layer. Furthermore, extra cost of purchasing SBD diode may be saved.