The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 2010

Filed:

Sep. 08, 2006
Applicants:

Andrea Basco, Naples, IT;

Maria Viviana Volpe, Pozzuoli, IT;

Maria Fortuna Bevilacqua, Gragnano, IT;

Valeria Casuscelli, Naples, IT;

Inventors:

Andrea Basco, Naples, IT;

Maria Viviana Volpe, Pozzuoli, IT;

Maria Fortuna Bevilacqua, Gragnano, IT;

Valeria Casuscelli, Naples, IT;

Assignee:

STMicroelectronics, S.r.l., Agrate Brianza, IT;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a nanotube non-volatile memory cell is proposed. The method includes the steps of: forming a source electrode and a drain electrode, forming a nanotube implementing a conduction channel between the source electrode and the drain electrode, forming an insulated floating gate for storing electric charges by passivating conductive nanoparticles with passivation molecules and arranging a disposition of passivated conductive nanoparticles on the nanotube, the conductive nanoparticles being adapted to store the electric charges and being insulated by the passivation molecules from the nanotube, and forming a control gate coupled with the channel.


Find Patent Forward Citations

Loading…