The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Nov. 30, 2007
Woo Yung Jung, Seoul, KR;
Guee Hwang Sim, Gangwon-do, KR;
Woo Yung Jung, Seoul, KR;
Guee Hwang Sim, Gangwon-do, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
The present invention relates to a method of forming an etching mask pattern from developed negative and positive photoresist layers. According to the present invention, a negative photoresist layer is formed over a substrate. Some regions of the negative photoresist layer are exposed, thereby generating hydrogen ions within the exposed negative photoresist regions. The negative photoresist layer is developed so that the exposed negative photoresist regions remain. A positive photoresist layer is formed over the substrate including the remaining negative photoresist regions. The substrate is baked so that hydrogen ions within the remaining negative photoresist regions are diffused into the positive photoresist layer at boundary portions adjacent to the remaining negative photoresist regions. The positive photoresist layer is developed to remove the positive photoresist portions into which the hydrogen ions are diffused.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile