The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
May. 12, 2009
Method and system for adaptively finding reference voltages for reading data from a mlc flash memory
Chien-fu Huang, Hsinchu, TW;
Ming-hung Chou, Hsinchu, TW;
Han-lung Huang, Hsinchu, TW;
Shih-keng Cho, Hsinchu, TW;
Chien-Fu Huang, Hsinchu, TW;
Ming-Hung Chou, Hsinchu, TW;
Han-Lung Huang, Hsinchu, TW;
Shih-Keng Cho, Hsinchu, TW;
Skymedi Corporation, Hsinchu, TW;
Abstract
A method and system for adaptively finding reference voltages for reading data from a multi-level cell (MLC) flash memory is disclosed. According to one embodiment, information about an initial threshold voltage distribution is firstly provided. A first threshold voltage in the initial threshold voltage distribution is then associated with a second threshold voltage in a shifted threshold voltage distribution to be determined, such that the information corresponding to the first threshold voltage is approximate to the information corresponding to the second threshold voltage. Accordingly, initial reference voltage or voltages of the initial threshold voltage distribution are shifted with an amount approximate to difference between the first threshold voltage and the second threshold voltage, thereby resulting in new reference voltage or voltages for reading the data from the MLC flash memory.