The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
Mar. 05, 2009
Johnny Chan, Fremont, CA (US);
Philip S. NG, Cupertino, CA (US);
Alan L. Renninger, Kapolei, HI (US);
Jinshu Son, Saratoga, CA (US);
Jeffrey M. Tsai, San Jose, CA (US);
Tin-wai Wong, Fremont, CA (US);
Tsung-ching Wu, Saratoga, CA (US);
Johnny Chan, Fremont, CA (US);
Philip S. Ng, Cupertino, CA (US);
Alan L. Renninger, Kapolei, HI (US);
Jinshu Son, Saratoga, CA (US);
Jeffrey M. Tsai, San Jose, CA (US);
Tin-Wai Wong, Fremont, CA (US);
Tsung-Ching Wu, Saratoga, CA (US);
Atmel Corporation, San Jose, CA (US);
Abstract
A programming circuit and method to apply a controlled or predetermined voltage pulse for charge transfer to or from the floating gate of a non-volatile memory cell in an incremental manner to control the overall voltage across the gate oxide. Voltage above a transfer threshold voltage, such as above a tunneling threshold voltage, is applied in a stepwise charge transfer manner to or from the floating gate up to a voltage limit that is below the thin oxide damage threshold. Controlling the overall voltage avoids oxide breakdown and enhances reliability.